H10B 61/22
Of the field-effect transistor [fet] type
Official title: {of the field-effect transistor [FET] type}
H10B61/22 (Of the field-effect transistor [fet] type) appears on 3,532 US grants and 4,186 published applications in this corpus.
Search patents in H10B- Granted patents
- 3,532
- Published applications
- 4,186
- Assignees
- 306
- Inventors
- 3,161
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 4 | 0 |
| 2000 | 8 | 0 |
| 2001 | 12 | 5 |
| 2002 | 17 | 40 |
| 2003 | 29 | 39 |
| 2004 | 50 | 95 |
| 2005 | 81 | 107 |
| 2006 | 73 | 84 |
| 2007 | 56 | 79 |
| 2008 | 50 | 80 |
| 2009 | 60 | 83 |
| 2010 | 68 | 118 |
| 2011 | 90 | 108 |
| 2012 | 106 | 158 |
| 2013 | 130 | 158 |
| 2014 | 172 | 195 |
| 2015 | 177 | 197 |
| 2016 | 197 | 226 |
| 2017 | 212 | 217 |
| 2018 | 180 | 197 |
| 2019 | 270 | 320 |
| 2020 | 280 | 328 |
| 2021 | 238 | 263 |
| 2022 | 201 | 250 |
| 2023 | 196 | 264 |
| 2024 | 212 | 239 |
| 2025 | 239 | 207 |
| 2026 | 122 | 129 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Semiconductor device15 Sep 2026US 12,740,069 B2Samsung Electronics Co., Ltd.
- Three dimensional semiconductor device with memory stack8 Oct 2026US 2026/0313917 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic tunnel junctions and methods of forming the same8 Oct 2026US 2026/0314266 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Detection architecture for a probabilistic-bit spintronic device1 Oct 2026US 2026/0305179 A1
- Semiconductor layout pattern with offset metal layer and manufacturing method thereof1 Oct 2026US 2026/0305181 A1United Microelectronics Corp.
Most cited
By later US patents
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Three-terminal magnetostatically coupled spin transfer-based MRAM cell269US 7,009,877 B1Grandis, Inc. · 2006
- MTJ MRAM series-parallel architecture242US 6,331,943 B1Motorola, Inc. · 2001
- Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same235US 7,843,718 B2Samsung Electronics Co., Ltd. · 2010
- Magnetic thin film memory, method of writing information in it, and me231US 6,226,197 B1Canon Kabushiki Kaisha · 2001