Semiconductor device

A semiconductor device comprising:

• a plurality of data storage patterns on a substrate, the plurality of data storage patterns spaced apart from each other in a first direction parallel to an upper surface of the substrate;
• a first upper conductive line on and above the plurality of data storage patterns, the first upper conductive line extending in the first direction and connected to the plurality of data storage patterns;
• a second upper conductive line on and above the first upper conductive line and extending in the first direction;
• and
• a plurality of via contacts between the first upper conductive line and the second upper conductive line and spaced apart from each other in the first direction,
• wherein the second upper conductive line is connected to the first upper conductive line through the plurality of via contacts,
• the plurality of via contacts are offset from the plurality of data storage patterns in the first direction between the first upper conductive line and the second upper conductive line,
• each of the plurality of data storage patterns includes an upper electrode, and
• the first upper conductive line includes a barrier pattern on upper surfaces of and on side surfaces of the upper electrodes of the plurality of data storage patterns.