Magnetic thin film memory, method of writing information in it, and me
AssigneeCanon Kabushiki Kaisha
InventorNaoki Nishimura
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Abstract
The present invention relates to a magnetic thin film memory having a hybrid element including a field effect transistor and a magnetoresistive thin film connected to the field effect transistor in parallel. In the magnetic thin film memory, the hybrid element is preferably arranged in plurality in a matrix state. The present invention also relates to a method of writing information in this magnetic thin film memory, and a method of reading the information written in this magnetic thin film memory.
Claims14
A magnetic thin film memory comprising a hybrid element comprising a field effect transistor and a spin tunnel type magnetic resistor connected to said field effect transistor in parallel, wherein said magnetic resistor comprises a first magnetic layer and a second magnetic layer having a coercive force larger than that of said first magnetic layer, said first and second magnetic layers begin stacked, and a nonmagnetic layer sandwiched between said first and second magnetic layers, said nonmagnetic layer having a thickness of 5 to 30 Å.
Dependencies are inferred from the claim text.