Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines

A magnetic memory device, comprising:

• a plurality of magnetic tunnel junction patterns on a substrate, the plurality of magnetic tunnel junction patterns spaced apart from each other along a first direction and a second direction, the first direction and the second direction intersecting each other and parallel to a bottom surface of the substrate;
• and
• a plurality of spin-orbit torque lines, each of the plurality of spin-orbit torque lines corresponding on a one of the plurality of magnetic tunnel junction patterns and spaced apart from each other along the first direction and the second direction,
• wherein when viewed in a plan view, immediately neighboring ones of the plurality of magnetic tunnel junction patterns are spaced apart from each other to reside at vertices of an imaginary polygon,
• immediately neighboring ones of the plurality of spin-orbit torque lines are spaced apart from each other to reside at the vertices of the imaginary polygon, and
• the imaginary polygon is an equilateral polygon.

A magnetic memory device, comprising:

• a substrate that includes a plurality of first cell regions and a plurality of second cell regions, the plurality of first cell regions and the second cell regions being alternately and repeatedly arranged along a first direction that is parallel to a bottom surface of the substrate;
• a plurality of magnetic tunnel junction patterns that are correspondingly on the first cell regions and the second cell regions;
• and
• a plurality of spin-orbit torque lines that are correspondingly on ones of the plurality of the magnetic tunnel junction patterns and are correspondingly on ones of the first cell regions and ones of the second cell regions,
• wherein the plurality of magnetic tunnel junction patterns are arranged in a zigzag fashion along the first direction, and
• the plurality of spin-orbit torque lines are arranged in a zigzag fashion along the first direction.