Magnetoresistance effect element and magnetic memory

A magnetoresistance effect element comprising:

• a laminate;
• a first via wiring;
• and
• a second via wiring,
• wherein the laminate has a spin-orbit torque wiring, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer,
• the first ferromagnetic layer is located between the spin-orbit torque wiring and the nonmagnetic layer in a lamination direction of the laminate,
• the nonmagnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer in the lamination direction of the laminate,
• the first via wiring is connected to the spin-orbit torque wiring,
• the second via wiring is connected to the spin-orbit torque wiring at a position different from a position of the first via wiring,
• the spin-orbit torque wiring is curved in the lamination direction with respect to a reference surface orthogonal to the lamination direction, and
• a first connection surface in contact with the spin-orbit torque wiring of the first via wiring and a second connection surface in contact with the spin-orbit torque wiring of the second via wiring are curved along the spin-orbit torque wiring.