H10B 61/10
Comprising components having two electrodes
Official title: {comprising components having two electrodes, e.g. diodes or MIM elements}
H10B61/10 (Comprising components having two electrodes) appears on 956 US grants and 1,202 published applications in this corpus.
Search patents in H10B- Granted patents
- 956
- Published applications
- 1,202
- Assignees
- 159
- Inventors
- 1,402
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 6 | 0 |
| 2001 | 7 | 5 |
| 2002 | 10 | 22 |
| 2003 | 17 | 21 |
| 2004 | 25 | 26 |
| 2005 | 28 | 41 |
| 2006 | 28 | 29 |
| 2007 | 18 | 12 |
| 2008 | 15 | 19 |
| 2009 | 16 | 19 |
| 2010 | 18 | 10 |
| 2011 | 17 | 27 |
| 2012 | 23 | 43 |
| 2013 | 21 | 24 |
| 2014 | 41 | 35 |
| 2015 | 38 | 32 |
| 2016 | 43 | 38 |
| 2017 | 41 | 48 |
| 2018 | 35 | 37 |
| 2019 | 46 | 66 |
| 2020 | 76 | 114 |
| 2021 | 88 | 92 |
| 2022 | 64 | 95 |
| 2023 | 55 | 85 |
| 2024 | 65 | 68 |
| 2025 | 72 | 80 |
| 2026 | 37 | 114 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor storage device and manufacturing method therefor29 Sep 2026US 12,751,016 B2Kioxia Corporation
- Cross-point magnetoresistive memory array containing selector rails and method of making the same15 Sep 2026US 12,740,068 B2SanDisk Technologies LLC
- Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells8 Sep 2026US 12,732,193 B2iCometrue Company Ltd.
- Scaled one transistor two resistor (1T 2R) memory8 Sep 2026US 12,733,178 B2International Business Machines Corporation
- Storage device8 Sep 2026US 12,733,404 B2Kioxia Corporation
- Multi-level memristor elements8 Oct 2026US 2026/0313913 A1Cirrus Logic International Semiconductor Ltd.
- Magnetic random access memory with free layer8 Oct 2026US 2026/0314267 A1Samsung Electronics Co., Ltd.
- Magnetoresistance effect element1 Oct 2026US 2026/0302032 A1TDK Corporation
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304785 A1SK hynix Inc.
Most cited
By later US patents
- Magnetic memory array using magnetic tunnel junction devices in the memory cells768US 5,640,343 AInternational Business Machines Corporation · 1997
- Read circuit for magnetic memory array using magnetic tunnel junction devices214US 5,793,697 AInternational Business Machines Corporation · 1998
- Formation of arrays of microelectronic elements176US 6,391,658 B1International Business Machines Corporation · 2002
- Annular GMR-based memory element175US 5,541,868 AThe United States of America as represented by the Secretary of the Navy · 1996
- Quantum random address memory with magnetic readout and/or nano-memory elements158US 6,016,269 AMotorola, Inc. · 2000