Cross-point magnetoresistive memory array containing selector rails and method of making the same

A device structure comprising:

• first electrically conductive lines that are laterally spaced apart from each other;
• second electrically conductive lines that are vertically spaced apart from the first electrically conductive lines and are laterally spaced apart from each other;
• a two-dimensional array of magnetic tunnel junctions located between the first electrically conductive lines and the second electrically conductive lines, wherein each of the magnetic tunnel junctions comprises a respective reference layer, a respective nonmagnetic tunnel barrier layer, and a respective free layer, and has a respective pair of first tapered planar sidewalls laterally extending along a first horizontal direction and tilted from a vertical direction toward or away from a second horizontal direction, and has a respective pair of second tapered planar sidewalls laterally extending along the second horizontal direction and tilted from the vertical direction toward or away from the first horizontal direction, wherein the first tapered planar sidewalls have a greater vertical extent than the second tapered planar sidewalls;
• and
• a two-dimensional array of selector elements located in series with the two-dimensional array of magnetic tunnel junctions and between the first electrically conductive lines and the second electrically conductive lines.