Magnetoresistance effect element
AssigneeTDK Corporation
InventorsDo BANG, Kazuumi INUBUSHI, Tomoyuki SASAKI
Life of this patent
Estimating the term…
Loading patent…
AssigneeTDK Corporation
InventorsDo BANG, Kazuumi INUBUSHI, Tomoyuki SASAKI
Estimating the term…
A magnetoresistance effect element includes: a laminate including a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer; an insulating layer surrounding the laminate; and a sidewall layer provided between the laminate and the insulating layer and surrounding the laminate. At least one of the first ferromagnetic layer and the second ferromagnetic layer contains a Heusler alloy. The sidewall layer is any one of a composite layer in which metal particles containing a metal contained in the Heusler alloy or a metal contained in the nonmagnetic layer are dispersed within metal oxide, a multilayer film including a metal oxide layer containing metal oxide and a metal layer containing the metal contained in the Heusler alloy or the metal contained in the nonmagnetic layer, and a metal layer containing low diffusion coefficient metal selected from a group consisting of Ta, Ru, W, Ir, Pt, Au, and Mo.
A magnetoresistance effect element comprising:
Dependencies are inferred from the claim text.