Semiconductor storage device and manufacturing method therefor

A semiconductor storage device comprising:

• a plurality of first wirings extending in a first direction;
• a plurality of second wirings extending in a second direction intersecting the first direction;
• a plurality of memory cells connected between the plurality of first wirings and the plurality of second wirings and including selectors each connected in series to variable resistance elements;
• and
• a first insulating film provided between the plurality of memory cells, wherein
• each of the selectors includes a selector material switching a current flowing to the variable resistance element according to a voltage difference between the first wiring and the second wiring, and a first electrode provided between the variable resistance element and the selector material,
• the selector material is provided between the first electrode and the first wiring and is formed of a first insulating material that contains a first impurity,
• the first insulating film is formed of the first insulating material that does not contain the first impurity, and
• an area of the selector material is less than an area of the variable resistance element when viewed in a stacking direction of the selector and the variable resistance element.

A semiconductor storage device comprising:

• a plurality of first wirings extending in a first direction;
• a plurality of second wirings extending in a second direction intersecting the first direction;
• and
• a plurality of memory cells connected between the plurality of first wirings and the plurality of second wirings and including selectors each connected in series to variable resistance elements, wherein
• each of the selectors includes a first selector material switching a current flowing to the variable resistance element according to a voltage difference between the first wiring and the second wiring, and a first electrode provided between the variable resistance element and the first selector material,
• the first selector material is provided between the first electrode and the first wiring and is formed of an insulating film that contains a first impurity,
• an area of the first selector material is greater than an area of the first electrode when viewed in a stacking direction of the selector and the variable resistance element, and
• an area of the first electrode on a side of the first selector material is less than an area of the variable resistance element when viewed in the stacking direction.