Method of manufacturing a magnetoresistive-based device

A method of manufacturing a magnetoresistive-based device having a magnetic material layer formed over a first electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, comprising:

• etching a portion of the second magnetic materials layer unprotected by a first hard mask to form a second magnetic materials;
• patterning a second hard mask over the tunnel barrier layer, the first hard mask, and sides of the second magnetic materials;
• and
• removing the tunnel barrier layer and the first magnetic materials layer unprotected by the second hard mask to form a tunnel barrier and second magnetic materials, wherein the first hard mask comprises a second electrode.

A method of manufacturing a magnetoresistive-based device having magnetic materials layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers having a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, comprising:

• forming a first hard mask layer over the second electrically conductive layer;
• patterning a first photo resist over the first hard mask layer;
• etching the first hard mask layer resulting in a first hard mask between the first photo resist and the second electrically conductive layer;
• etching the second electrically conductive layer resulting in a second electrically conductive electrode between the first hard mask and the second magnetic materials layer;
• etching the second magnetic materials layer resulting in a second magnetic materials between the second electrically conductive electrode and the tunnel barrier layer, the first hard mask, the second electrically conductive electrode, and the second magnetic materials defining a side;
• depositing a second hard mask layer over the tunnel barrier layer, the first hard mask, and the side;
• patterning a second photo resist on the second hard mask and over the first hard mask layer;
• etching the second hard mask layer resulting in a second hard mask;
• etching the tunnel barrier layer resulting in a tunnel barrier between the second magnetic materials and the first magnetic materials layer;
• etching the first magnetic materials layer resulting in a first magnetic material between the tunnel barrier and the first electrically conductive layer;
• and
• etching the first electrically conductive layer resulting in a first electrode adjacent the first magnetic materials.