US 12,757,409 B2Granted

Semiconductor device

AssigneeSamsung Electronics Co., Ltd.

InventorKilho Lee

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Abstract

A semiconductor device includes a substrate including a cell region and a peripheral region, a wiring structure on the cell and peripheral regions, a lower insulating layer on the wiring structure on the cell and peripheral regions, data storage patterns on the lower insulating layer on the cell region, a cell insulating layer on the lower insulating layer on the cell region and covering the data storage patterns, including cell extending portions extending above the lower insulating layer on the peripheral region in a first direction, the cell extending portions spaced apart from each other in a second direction, and a peripheral insulating layer on the lower insulating layer on the peripheral region and including a material different from that of the cell insulating layer. The peripheral insulating layer extends between the cell extending portions and is in contact with a side surface of the cell insulating layer.

Claims20

Dependent claims

A semiconductor device comprising:

a substrate defining a cell region and a peripheral region;
a wiring structure disposed in the cell region and the peripheral region;
a lower insulating layer disposed on the wiring structure on the cell region and extending above the wiring structure on the peripheral region;
a plurality of data storage patterns disposed on the lower insulating layer on the cell region;
a cell insulating layer disposed on the lower insulating layer on the cell region and covering the plurality of data storage patterns, the cell insulating layer including a plurality of cell extending portions, wherein the plurality of cell extending portions extend above the lower insulating layer on the peripheral region in a first direction that is parallel to an upper surface of the substrate, and wherein the plurality of cell extending portions are spaced apart from each other in a second direction that is parallel to the upper surface of the substrate and intersects the first direction;
and
a peripheral insulating layer disposed on the lower insulating layer on the peripheral region and including a material different from the cell insulating layer,
wherein the peripheral insulating layer extends between the plurality of cell extending portions and contacts a side surface of the cell insulating layer.

5 more elements

A semiconductor device comprising:

a substrate defining a cell region and a peripheral region;
a wiring structure disposed on the cell region and the peripheral region, wherein the wiring structure includes a reference conductive line extending in a first direction parallel to an upper surface of the substrate on the cell region, and wherein the reference conductive line extends above the peripheral region in the first direction;
a lower insulating layer disposed on the wiring structure on the cell region and extending above the wiring structure in the peripheral region;
a plurality of data storage patterns disposed on the lower insulating layer on the cell region;
a cell insulating layer disposed on the lower insulating layer on the cell region and covering the plurality of data storage patterns, wherein the cell insulating layer includes a cell extending portion extending above the lower insulating layer on the peripheral region in the first direction, and wherein the cell extending portion vertically overlaps the reference conductive line on the peripheral region in a direction perpendicular to the upper surface of the substrate;
and
a peripheral insulating layer disposed on the lower insulating layer on the peripheral region and including a material different from that of the cell insulating layer,
wherein the peripheral insulating layer is in contact with a side surface of the cell extending portion.

5 more elements

Dependencies are inferred from the claim text.