Doping process for producing homojunctions in semiconductor substrates
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorRoland Schindler
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Abstract
In doping process for producing homojunctions in a semiconductor substrate, and the semiconductor substrate, dopants penetrate by way of diffusion employing an ultraviolet light source. A mask is introduced between the light source and the semiconductor which has regions of varying thickness. Dopant material is placed between the mask and the substrate, and the mask is then irradiated by the light source.
Claims23
A doping process for producing a homojunction in a semiconductor substrate into which dopants penetrate by way of diffusion, said process comprising:
- positioning said semiconductor substrate adjacent a light source having an emission spectrum that includes ultraviolet components;
- placing a light absorbing mask between a surface of said semiconductor substrate and said light source, said mask having a plurality of regions having respective differing thicknesses corresponding to a pattern of dopant concentration forming said homojunction in said substrate;
- applying a dopant layer of material containing dopant atoms to said surface of said semiconductor substrate, said dopant layer being disposed between said mask and said surface;
- and
- irradiating a surface of said mask with light from said light source, whereby said layer of material containing dopant atoms is impinged upon by a pattern of light from said light source, corresponding to said differing thicknesses of said regions of said light absorbing mask.
A semiconductor substrate having a homojunction with regions into which dopants are penetrated, said semiconductor substrate being made by a process comprising:
- positioning said semiconductor substrate adjacent a light source having an emission spectrum that includes ultraviolet components;
- placing a light absorbing mask between a surface of said semiconductor substrate and said light source, said mask having a plurality of regions having respective differing thicknesses corresponding to a pattern of dopant concentration forming said homojunction in said substrate;
- applying a dopant layer of a material containing dopant atoms to said surface of said semiconductor substrate, said dopant layer being disposed between said mask and said surface;
- and
- irradiating a surface of said mask with light from said light source, whereby said layer of material containing dopant atoms is impinged upon by a pattern of light from said light source, corresponding to said differing thicknesses of said regions of said light absorbing mask.
A process for doping a semiconductor substrate with regions of differing dopant concentration according to a pattern wherein different regions of said semiconductor substrate are doped with different concentrations defining a homojunction in said substrate, said process comprising:
- positioning said substrate adjacent a light source having an emission spectrum that includes ultraviolet components;
- applying a dopant layer of material containing dopant atoms to a surface of said substrate, said dopant layer being disposed between said mask and said surface;
- and
- irradiating said layer of material containing dopant atoms with light from said light source distributed according to a pattern which corresponds to said pattern of dopant concentration, whereby said dopant atoms diffuse into said substrate at differing rates according to said pattern.
A process for doping a semiconductor substrate with regions of differing dopant concentration according to a dopant concentration, pattern, wherein different regions of said semiconductor substrate are doped with different concentrations, defining a homojunction in said substrate, said process comprising:
- applying a layer of material containing dopant atoms to a surface of said substrate;
- causing said dopant atoms to diffuse into said substrate at differing rates in different regions of said substrate by irradiating said layer of material containing dopant atoms with light containing an ultraviolet component, said light being distributed on said layer of material containing dopant atoms applied to said surface of said substrate, in an illumination pattern which corresponds to said dopant concentration pattern.
A doping process for producing a homojunction in a semiconductor substrate into which dopants penetrate by way of diffusion, said process comprising:
- providing a semiconductor substrate;
- applying a layer of a material containing dopant atoms to a surface of said substrate;
- applying a layer of masking material onto a surface of said layer of material containing dopant atoms, whereby said layer of material containing dopant atoms is disposed between said layer of masking material and said substrate;
- treating said layer of masking material to form regions having respective different thicknesses corresponding to a pattern of dopant concentration forming said homojunction in said substrate;
- forming said homojunction in said substrate, by irradiating a surface of said layer of masking material with light from a light source, whereby said layer of material containing dopant atoms is impinged on by a pattern of light from said light source, corresponding to said differing thicknesses of said regions of said layer of masking material.
Dependencies are inferred from the claim text.