Y10S 148/084
Ion implantation of compound devices
Y10S148/084 (Ion implantation of compound devices) appears on 116 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 116
- Published applications
- 0
- Assignees
- 57
- Inventors
- 203
- Latest grant
- 9 Mar 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 7 | 0 |
| 1979 | 6 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 13 | 0 |
| 1983 | 13 | 0 |
| 1984 | 7 | 0 |
| 1985 | 6 | 0 |
| 1986 | 17 | 0 |
| 1987 | 11 | 0 |
| 1988 | 1 | 0 |
| 1989 | 6 | 0 |
| 1990 | 4 | 0 |
| 1991 | 5 | 0 |
| 1992 | 3 | 0 |
| 1993 | 4 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device and method for manufacturing the same9 Mar 1999US 5,880,487 AKabushiki Kaisha Toshiba
- Method of making a semiconductor device4 Nov 1997US 5,683,937 AKabushiki Kaisha Toshiba
- Soft proton isolation process for an acoustic charge transport integrated circuit23 May 1995US 5,418,375 AElectronic Decisions Incorporated
- Soft proton isolation process for an acoustic charge transport integrated circuit25 Oct 1994US 5,358,877 AElectronic Decisions Incorporated
- Implanting impurities in semiconductors and semiconductor implanted with impurities15 Mar 1994US 5,294,557 AThe United States of America as represented by the Secretary of the Navy
No published applications in this class yet.
Most cited
By later US patents
- Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs114US 4,551,394 AHoneywell Inc. · 1985
- Method of manufacturing devices having superlattice structures74US 4,983,540 AHitachi, Ltd. · 1991
- Fabrication of gallium arsenide-germanium heteroface junction device73US 4,400,221 AThe United States of America as represented by the Secretary of the Air Force · 1983
- Multi-dimensional quantum well device62US 4,503,447 AThe United States of America as represented by the Secretary of the Army · 1985
- Intermetallic semiconductor ohmic contact46US 4,583,110 AInternational Business Machines Corporation · 1986