US 4,503,447 AGranted

Multi-dimensional quantum well device

AssigneeThe United States of America as represented by the Secretary of the Army

InventorsGerald J. Iafrate, Thomas A. Aucoin, David K. Ferry

Life of this patent

Estimating the term…

Loading patent…

Abstract

A superlattice semiconductor device consisting of a plurality of multi-dimensional charge carrier confinement regions of semiconductor material exhibiting relatively high charge carrier mobility and a low band gap which are laterally located in a single planar layer of semiconductor material exhibiting a relatively low charge carrier mobility and high band gap and wherein the confinement regions have sizes and mutual separation substantially equal to or less than the appropriate deBroglie wavelength. The device, in its preferred form, comprises a thin film of semiconductor material selected from group II-VI or III-V compounds or silicon wherein there is formed laterally located cylindrically shaped periodic regions which are adapted to act as quantum well confinement regions for electrons.

Claims23

Dependent claims

A semiconductor device formed from first and second type of semiconductive material exhibiting predetermined energy gaps between their conductive and valance bands and wherein said first type of semiconductive material further exhibits a relatively low charge carrier mobility at high band gap and wherein said second type of semiconductive material exhibits relatively high charge carrier mobility at low band gap and comprising,

a thin uniform planar layer of said first type of semiconductive material having opposite ends,
a plurality of multi-dimensional charge carrier confinement regions of said second type of semiconductive material laterally disposed within said layer of said first type semiconductive material and wherein said confinement regions have respective sizes and mutual separations between adjacent regions substantially equal to or less than the de Broglie wavelength .lambda.* of the charge carrier and which is defined by the expression:
.lambda.*=h/m* v.sub.t
where h is Planck's constant, m* is the effective mass of the charge carrier, and v.sub.t is the drift velocity of the charge carrier, and
means applying potential across the opposite ends of said layer of said first type of semiconductive material causing rapid charge carrier transfer between said confinement regions in the direction of applied potential.

2 more elements

Dependencies are inferred from the claim text.