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US 4,400,221 AGranted
Fabrication of gallium arsenide-germanium heteroface junction device
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorW. Patrick Rahilly
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Abstract
Doping with one of the group Ia elements Li, Na or K near the heteroface junction produced P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge.
Claims16
The method of forming a semiconductor device comprising the steps:
- a. starting with a germanium wafer having a given type of conductivity;
- b. doping a region adjacent one surface of said wafer with a group Ia dopant selected from lithium, sodium and potassium;
- c. growing a layer of a III-V compound including gallium and arsenic on said one surface during which said group Ia dopant diffuses into the growing layer, the growing layer being doped for a given type of conductivity;
- whereby a heteroface junction is formed at said one surface with the regions adjacent thereto having N+ conductivity in the III-V compound, a lower junction is formed in the germanium, and an upper junction is formed in the III-V compound.
1 more element
Dependencies are inferred from the claim text.