Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a rectangular semiconductor chip having a main surface;
• a stripe-form semiconductor element forming portion formed in parallel to one of the sides of said semiconductor chip to cross the main surface;
• a first island portion formed on the main surface of said semiconductor chip and separated from said stripe-form element forming portion by a first groove portion formed along one of the sides of said semiconductor element forming portion in a longitudinal direction;
• a second island portion formed on the main surface of said semiconductor chip and separated from said stripe-form element forming portion by a second groove portion formed along the other of the sides of said semiconductor element forming portion in the longitudinal direction, said second groove portion including a hollow space which enlarges a width of said second groove portion in a direction away from said semiconductor element in substantially a central portion of a longitudinal length of said second groove portion, and having a side surface facing said stripe-form semiconductor element formation portion only with a side surface formed in parallel and obliquely to the longitudinal direction of said semiconductor element forming portion;
• a surface electrode formed on at least part of an upper portion of said semiconductor element forming portion;
• an external lead connecting terminal electrode formed in said hollow space;
• a wiring including at least a portion formed on part of a bottom surface of said second groove portion and that one of side surfaces of said second groove portion which is adjacent to said semiconductor element forming portion, for electrically connecting said surface electrode to said terminal electrode;
• a first dummy electrode formed on said first island portion said first dummy electrode being disconnected from said surface electrode at least at that one of the side surfaces of said first groove portion which is adjacent to said stripe-form semiconductor element forming portion;
• and
• a second dummy electrode formed on said second island portion, said second dummy electrode being disconnected from said wiring at least at that one of the side surfaces of said second groove portion which is adjacent to said second dummy electrode,
• wherein said surface electrode, said external lead connecting terminal electrode, said wiring, said first dummy electrode and said second dummy electrode are simultaneously formed by applying a conductive material in an oblique direction from an upper side of an outer edge of said second dummy electrode, perpendicular to the longitudinal direction of said stripe-form semiconductor element forming portion, by a vacuum deposition method of high directivity.