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US 5,294,557 AGranted
Implanting impurities in semiconductors and semiconductor implanted with impurities
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsFrederick G. Moore, Harry B. Dietrich
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Abstract
A method for ion-implanting a dopant species in semiconductors includes the steps of implanting a dopant species in a semiconductor material at a predetermined rate, the predetermined rate being based on a rate corresponding to a maximum in a characteristic graph of percent activation as a function of dopant species implantation rate; and annealing the dopant implanted semiconductor.
Claims13
A method of doping substrate to produce a doped semiconductor material having enhanced carrier activation, comprising the steps of:
- selecting a dopant species for ion-implantation into said substrate;
- determining a maximum implantation dose rate of said dopant species, at which percent activation of said dopant species after an annealing step, as a function of ion-implantation dose rate, is at a maximum;
- implanting a dopant species into said substrate at about said maximum dose rate and at a fluence of at least 10.sup.13 cm.sup.2 ;
- and
- annealing said dopant implanted semiconductor material.
2 more elements
Dependencies are inferred from the claim text.