Y10S 148/041
Doping control in crystal growth
Y10S148/041 (Doping control in crystal growth) appears on 43 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 43
- Published applications
- 1
- Assignees
- 32
- Inventors
- 104
- Latest grant
- 23 Dec 2003
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 8 | 0 |
| 1990 | 5 | 0 |
| 1991 | 8 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Silicon wafers for CMOS and other integrated circuits23 Dec 2003US 6,667,522 B2Intel Corporation
- Silicon wafers for CMOS and other integrated circuits23 Jul 2002US 6,423,615 B1Intel Corporation
- Semiconductor integrated circuit using monolayer epitaxial growth18 May 1999US 5,905,297 AFujitsu Limited
- Method for fabricating compound semiconductor laser4 Aug 1998US 5,789,273 ASony Corporation
- Method for forming semiconductor integrated circuit using monolayer epitaxial growth6 Jan 1998US 5,705,408 AFujitsu Limited
Most cited
By later US patents
- Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy67US 4,859,625 AResearch Development Corporation of Japan, Junichi Nishizawa and Oki Electric Industry Co., Ltd. · 1989
- Amino replacements for arsine, antimony and phosphine49US 5,124,278 AAir Products and Chemicals, Inc. · 1992
- Method of forming single crystalline magnesia spinel film47US 4,882,300 AAgency of Industrial Science and Technology · 1989
- Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products33US 5,294,564 AThomson-CSF · 1994
- Method of making buffer layers for III-V devices using solid phase epitaxy30US 4,952,527 AMassachusetts Institute of Technology · 1990