Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy

A method of epitaxial growth for forming on a substrate crystal a single crystal of a compound semiconductor doped with an impurity element comprising the steps of successively introducing into a crystal growth vessel a gaseous compound III.sub.A containing a III group element as one of component elements of the compound semiconductor, a gaseous compound III.sub.B containing another III group element as another component element of the compound semiconductor, a gaseous compound V.sub.C containing a V group element as still another component element of the compound semiconductor and a doping gas containing the impurity element of the compound semiconductor in this order or in the order V.sub.C, III.sub.A, III.sub.B and the doping gas, and evacuating the chamber between the successive introductions of two gaseous compounds so as to avoid mixing together the gaseous compounds.

A method of epitaxial growth for forming on a substrate crystal of a single crystal of an impurity doped compound semiconductor containing two III group elements and a V group element as component elements, and a II group element, a IV group element and a VI group element as impurity elements, the method comprising the step of successively introducing a gaseous compound III.sub.A containing one of the two III group elements, a gaseous compound III.sub.B containing another one of the two III group elements, a gaseous compound V.sub.C containing the V group element, a gaseous compound II.sub.D containing the II group element, a gaseous compound IV.sub.E containing the IV group element and a gaseous compound VI.sub.F containing the VI group element into a crystal growth vessel in the order II.sub.D, III.sub.A, III.sub.B, IV.sub.E, V.sub.C and VI.sub.F.

A method of epitaxial growth for forming a substrate crystal a single crystal of a quaternary alloy or a mixed crystalline compound semiconductor containing four component elements such as two III group elements and two V group elements, the method comprising the step of successively introducing into a crystal growth vessel in the following sequence, a gaseous compound III.sub.A containing one element of the two III group elements, a gaseous compound III.sub.B containing another element of the two group elements, a gaseous compound V.sub.C containing one element of the two V group elements, and a gaseous compound v.sub.D containing another element of the two V group elements .

A method of epitaxial growth for forming on a substrate crystal a single crystal of a compound semiconductor containing three component elements, two elements thereof being elements of the same group but another one being an element of different group, the method comprising the steps of successively introducing into a crystal growth vessel three kinds of gaseous compounds respectively containing a different one of said three component elements, evacuating the vessel between the successive introductions of two gaseous compounds so as to avoid mixing together the gaseous compounds, and repeating the step of successively introducing to form a multilayer thin film structure comprising a mixed crystal of two different group elements and a mixed crystal of said three component elements.