US 5,294,564 AGranted

Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products

AssigneeThomson-CSF

InventorsLeonidas Karapiperis, Didier Pribat

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Abstract

The invention pertains to the field of fabrication, by vapor phase deposition, of the thin layers of monocrystalline, polycrystalline or amorphous material on a substrate having an identical or different nature. The aim is to provide a method, enabling this structure to be made, that includes a modulation of both the composition and the doping, in a direction that is not perpendicular to the surface of the substrate, notably in a lateral way to obtain a planar technology. According to the invention, this thin layer is made by conformal epitaxy, using a crystalline seed in gas phase, between two confinement layers made of a distinct material in such a way that there can be neither nucleation nor deposition of semiconductive material on the surfaces of said confinement layers and wherein the variation of the gaseous mixture of said gas phase is controlled to obtain said modulation of the composition and/or of the doping of said thin film.

Claims30

Dependent claims

A method for fabrication of a thin monocrystalline layer of a semiconducting material, through growth by gas phase deposition, comprising:

a first step of growing the semiconducting material from a seed crystal,
wherein said crystal growth is confined within a space located between opposing confining surfaces of two substantially horizontal confinement layers,
wherein each confinement layer is made of materials that are different from the semiconducting materials of the thin monocrystalline layer so that nucleation or deposition of the semiconducting material onto exposed surfaces of either of the two confinement layers does not occur,
wherein growth during the first step occurs along a substantially vertical direction toward one of said confinement layers,
wherein the space between the two confinement layers defines the thickness of the thin monocrystalline layer;
then
a second step of growth along a substantially horizontal direction, wherein the second step further comprises varying the gas mixture in the gas phase to thereby modulate at least one of the composition and the doping of the thin monocrystalline layer along a substantially horizontal direction;
and
whereby the thin monocrystalline layer is formed with a modulation of one of the composition or doping along a direction which is parallel to the confining surfaces of the confinement layers.

6 more elements

A method for making a thin layer of at least one single crystal semiconductor material by gas phase deposition comprising the steps of:

forming a structure comprising a seed crystal with a planar horizontal crystal first surface, said first surface confined by and connected to essentially vertical parallel lower portions of first and second dielectric wall means, the lower portions of the first and second wall means are connected to upper portions of said first and second wall means, respectively, said upper portions are flat, horizontal, and opposed to one another, thereby providing a channel between the first and second wall means in the shape of an inverted "L", said crystal first surface facing and opposed to an opposing region of said upper portion of said first wall means;
growing a first epitaxial crystal vertically upon said planar horizontal crystal first surface toward said opposing region of said upper portion of said first wall means, thereby blocking defects growing vertically and providing a single crystal second surface in a lateral cavity defined by the horizontal upper portions of said first and second wall means;
and
growing a second epitaxial crystal horizontally on said single crystal second surface by conformal selective epitaxy, whereby said second epitaxial crystal grows without defects.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 08/028,607Filed 8 Mar 1993 · continuation
Priority: FR 89 0425731 Mar 1989
Granted: 15 Mar 1994
Term ends: Not estimatedThe source records don’t support an estimate.

Classification19 codes

H10D 8/053
Manufacture or treatment: of heterojunction diodes or of tunnel diodes
H01S 5/20
Semiconductor lasers: structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical…
H01S 5/2203
Having a ridge or stripe structure: with a transverse junction stripe [TJS] structure
H10D 62/824
Heterojunctions: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions