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US 5,789,273 AGranted
Method for fabricating compound semiconductor laser
AssigneeSony Corporation
InventorTadashi Yamamoto
Life of this patent
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Abstract
After a compound semiconductor layer including InP is formed on a semiconductor substrate, a compound semiconductor layer including As is epitaxially grown by metal organic chemical vapor deposition method using an organic As as the material for feeding the As.
Claims11
A method for fabricating a compound semiconductor laser, comprising the steps of:
- fabricating a compound semiconductor layer including InP on a semiconductor substrate;
- and
- epitaxially growing a compound semiconductor capping layer including As by metal organic chemical vapor deposition with an organic As as material for feeding the As.
A method for fabricating a compound semiconductor laser, comprising the steps of:
- fabricating a compound semiconductor layer including InP on a semiconductor substrate;
- and
- epitaxially growing a compound semiconductor layer including As by metal organic chemical vapor deposition with the compounds:
- R.sub.3 As, or R.sub.2 AsH as material for feeding the As, wherein R is either methyl or ethyl.
1 more element
A method for fabricating a compound semiconductor laser, comprising the steps of:
- fabricating a compound semiconductor layer including InP on a semiconductor substrate;
- and
- epitaxially growing a compound semiconductor GaAs layer by metal organic chemical vapor deposition with an organic As compound feeding the As.
Dependencies are inferred from the claim text.