Y10S 148/045
Electric field
Y10S148/045 (Electric field) appears on 31 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 31
- Published applications
- 1
- Assignees
- 18
- Inventors
- 49
- Latest grant
- 18 Feb 2003
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 5 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 8 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- CVD apparatus18 Feb 2003US 6,520,189 B1Semiconductor Energy Laboratory Co.Ltd.
- CVD apparatus11 Jan 2000US 6,013,338 ASemiconductor Energy Laboratory Co.Ltd.
- Method of making a high voltage planar edge termination structure3 Feb 1998US 5,714,396 AMotorola, Inc.
- High voltage planar edge termination structure and method of making same23 Jan 1996US 5,486,718 AMotorola, Inc.
- Method of manufacturing a semiconductor element31 Oct 1995US 5,462,886 AFuji Xerox Co., Ltd.
Most cited
By later US patents
- Method of depositing films using photo-CVD with chamber plasma cleaning360US 4,950,624 ASemiconductor Energy Laboratory Co.Ltd. · 1990
- Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements242US 4,891,330 AEnergy Conversion Devices, Inc. · 1990
- Method for producing an amorphous silicon semiconductor device using a multichamber PECVD apparatus74US 4,800,174 AMatsushita Electric Industrial Co., Ltd. · 1989
- Insulating film, sheet, or plate material with metallic coating and method for manufacturing same67US 4,091,138 ASumitomo Bakelite Co., Ltd. · 1978
- Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer62US 4,870,030 AResearch Triangle Institute · 1989