CVD apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTakashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Abstract
An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
Claims15
A method of forming a device comprising the steps of:
- forming a first layer comprising silicon oxide over a substrate using a first reactive gas containing at least one of monosilane and disilane;
- forming a second layer comprising silicon oxide over said first layer by plasma CVD using a second reactive gas comprising tetra-ethyl-oxy-silane and an oxide gas;
- and
- cleaning an inside of a chamber in which said second layer has been formed,
- wherein the cleaning step is performed by using an etching gas containing fluorine.
A method of forming a device comprising the steps of:
- forming a first layer comprising silicon oxide over a substrate using a first reactive gas containing at least one of monosilane and disilane;
- forming a layer comprising silicon oxide over said first layer by plasma CVD using a second reactive gas comprising tetra-ethyl-oxy-silane and an oxide gas;
- and
- cleaning an inside of a chamber in which said second layer has been formed, wherein the cleaning step is performed by using an etching gas containing fluoride.
A method of forming a device comprising the steps of:
- forming a first layer comprising silicon oxide over a substrate using a first reactive gas containing at least one of monosilane and disilane;
- forming a second layer comprising silicon oxide over said first layer by plasma CVD using a second reactive gas comprising tetra-ethyl-oxy-silane;
- and
- cleaning an inside of a reaction chamber in which said second layer has been formed,
- wherein the cleaning step is carried out by using an etching gas comprising nitrogen fluoride.
A method of forming a device comprising the steps of:
- forming a first layer comprising silicon oxide over a substrate using a first reactive gas containing at least one of monosilane and disilane;
- forming a second layer comprising silicon oxide over said first layer by plasma CVD using a second reactive gas comprising tetra-ethyl-oxy-silane and nitrogen oxide in accordance with the following equation, Si(OC2H5)4+24N2O Si O2+8CO2+10H2O+24N2;
- and
- cleaning an inside of a reaction chamber in which said second layer has been formed,
- wherein the cleaning step is performed by using an etching gas comprising nitrogen fluoride.
A method of forming a device comprising the steps of:
- forming a first conductive layer over a substrate;
- forming a first layer comprising silicon oxide over said first conductive layer using a first reactive gas containing at least one of monosilane and disilane;
- forming a second layer comprising silicon oxide over said first layer by plasma CVD using a second reactive gas comprising tetra-ethyl-oxy-silane and an oxide gas;
- cleaning an inside of a reaction chamber in which said second layer has been formed;
- and
- forming a second conductive layer over said second layer,
- wherein the cleaning step is performed by using an etching gas comprising nitrogen fluoride.
Dependencies are inferred from the claim text.