CVD apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTakashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Abstract
An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
Claims52
A method for forming a device comprising the steps of:
- forming a first layer comprising a material selected from the group consisting of silicon oxide and silicon nitride on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising at least organic silane.
A method for forming a device comprising the steps of;
- forming a first layer comprising a material selected from the group consisting of silicon oxide and silicon nitride on a surface having a step by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- and
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising at least organic silane.
A method for forming a device comprising the steps of:
- preparing a substrate having a plurality of conductive lines thereon;
- forming a first layer comprising a material selected from the group consisting of silicon oxide and silicon nitride over said plurality of wirings by CVD using a first reactive gas containing at least one of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- and
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas containing at least organic silane;
- and
- forming an electrode on said second layer.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon oxide on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising at least organic silane, and
- cleaning an inside of a reaction chamber in which said second layer has been formed.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon nitride on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising at least organic silane, and
- cleaning an inside of a reaction chamber in which said second layer has been formed.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon oxide on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising TEOS and nitrogen oxide.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon nitride on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising TEOS and nitrogen oxide.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon oxide on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising TEOS and oxygen.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon nitride on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising TEOS and oxygen.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon oxide on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising TEOS and nitrogen oxide, and
- cleaning an inside of a reaction chamber in which said second layer has been formed.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon oxide on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising TEOS and oxygen, and
- cleaning an inside of a reaction chamber in which said second layer has been formed.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon nitride on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising TEOS and nitrogen oxide, and
- cleaning an inside of a reaction chamber in which said second layer has been formed.
A method for forming a device comprising steps of:
- forming a first layer comprising silicon nitride on a surface by CVD using a first reactive gas containing a gas selected from the group consisting of SiH.sub.4 and Si.sub.2 H.sub.6 ;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising TEOS and oxygen, and
- cleaning an inside of a reaction chamber in which said second layer has been formed.
Dependencies are inferred from the claim text.