CVD apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTakashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Abstract
An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
Claims1
A method of forming a device comprising the steps of:
- forming a layer comprising silicon oxide over a substrate by plasma CVD using a reactive gas comprising tetra-ethyl-oxy-silane (Si(OC2H5)4) and an oxide gas;
- cleaning an inside of a reaction chamber in which said layer has been formed.
Dependencies are inferred from the claim text.