Y10S 148/081
Insulators
Y10S148/081 (Insulators) appears on 19 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 19
- Published applications
- 0
- Assignees
- 12
- Inventors
- 39
- Latest grant
- 23 Oct 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 5 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device23 Oct 2001US 6,307,225 B1Sharp Kabushiki Kaisha
- Semiconductor device having a porous insulation film17 Apr 2001US 6,218,318 B1Fujitsu Limited
- Low dielectric constant insulation layer for integrated circuit structure and method of making same27 Feb 1996US 5,494,859 ALSI Logic Corporation
- Process for plugging defects in a dielectric layer of a semiconductor device4 May 1993US 5,208,189 AMotorola, Inc.
- Method and apparatus for semiconductor device passivation30 Jun 1992US 5,125,136 AMotorola, Inc.
No published applications in this class yet.
Most cited
By later US patents
- Planarization process75US 4,879,257 ALSI Logic Corporation · 1989
- Low dielectric constant insulation layer for integrated circuit structure and method of making same55US 5,494,859 ALSI Logic Corporation · 1996
- Semiconductor device having a porous insulation film44US 6,218,318 B1Fujitsu Limited · 2001
- Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning42US 5,021,365 AInternational Business Machines Corporation · 1991
- UV erasable EPROM with UV transparent silicon oxynitride coating36US 4,581,622 AFujitsu Limited · 1986