US 5,021,365 A · Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning

Abstract

Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

Claims8

Dependent claims

The process of providing a cationic ingredient oxide on a surface area of a compound semiconductor member comprising in combination the steps of:

growing on said surface area, in the presence of an oxidation enhancement agent, a composite oxide of oxides of each ingredient of said compound semiconductor member while simultaneously subjecting said surface area and said composite oxide to an anionic species removal agent to remove said anionic species leaving said cationic ingredient oxide.

Dependencies are inferred from the claim text.

Facts

Application

07/322,583Filed 13 Mar 1989 · division

Priority

16 Jun 1986

Granted

4 Jun 1991

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10P 14/6312
Of the semiconductor materials: of Group III-V semiconductors
H10D 30/6738
Characterised by the electrode materials: schottky barrier electrodes
H10D 30/675
Characterised by the active materials: group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
H10D 62/83
Characterised by the materials: being Group IV materials, e.g. B-doped Si or undoped Ge

Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning

Life of this patent

Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning

Life of this patent

Abstract

Claims8