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US 6,218,318 B1Granted
Semiconductor device having a porous insulation film
AssigneeFujitsu Limited
InventorsYoshiyuki Ohkura, Hideki Harada
Life of this patent
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Abstract
A semiconductor device includes a porous interlayer insulation film including therein a stacking of SiO2 particles having a diameter in the range between about 5 nm and about 50 nm and stacked so as to form a void between adjacent particles, wherein the interlayer insulation film has a porosity in the range between about 13% and about 42%.
Claims9
A method of fabricating a semiconductor device having a multilayer interconnection structure including an interlayer insulation film, comprising the steps of:
- applying a film-forming liquid on an underlying structure, said film-forming liquid including therein SiO2 particles and a binder;
- and
- heating said underlying structure applied with said film-forming liquid to form an insulation film thereon as said interlayer insulation film, such that said insulation film includes said SiO2 particles and voids formed between said SiO2 particles,
- wherein said SiO2 particles have a diameter in the range between about 5 nm and about 50 nm, and
- wherein said step of heating is conducted at a temperature in the range between about 350° C. and about 400° C., in an inert gas atmosphere containing oxygen with a concentration of 1% or less.
2 more elements
A method of fabricating a semiconductor device having a multilayer interconnection structure containing an interlayer insulation film, comprising the steps of:
- forming an insulation film above a semiconductor structure as a part of said interlayer insulation film;
- and
- forming a CVD insulation film on said insulation film in contact with said insulation film as a part of said interlayer insulation film;
- said step of forming said insulation film including the steps of:
- applying a film-forming liquid above said semiconductor structure, said film-forming liquid containing therein SiO2 particles and a binder, each of said SiO2 particles being substantially a filled particle;
- and
- heating said semiconductor structure applied with said film-forming liquid to form an insulation film thereon such that said insulation film includes said SiO2 particles and a void is formed between said SiO2 particles.
4 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a first insulation film above an underlying semiconductor structure;
- forming a first CVD film on said first insulation film by a CVD process, said first insulation film being in intimate contact with said first CVD film;
- forming a first opening in said first CVD film;
- forming a second insulation film on said first CVD film;
- forming a second CVD film on said second insulation film in intimate contact with said second insulation film;
- forming a second opening in said second CVD film in correspondence to said first opening, such that said second opening has a size larger than said first opening;
- forming a groove in said second insulation film in correspondence to said second opening, by applying a dry etching process acting selectively to said second insulation film through said second opening, such that said groove penetrates through said second insulation film;
- forming a through-hole in said first insulation film in correspondence to said first opening, by applying a dry etching process acting selectively to said first insulation film through said groove and through said first opening;
- and
- filling said groove and said through-hole by a conductor pattern;
- wherein said first insulation film is formed by:
- applying a film-forming liquid containing therein SiO2 particles having a diameter in the range between about 5nm and about 50 nm and a binder, above said semiconductor structure;
- and heating said semiconductor structure applied with said film-forming liquid to form said first insulation film such that said first insulation film includes a void therein between said SiO2 particles;
- and
- wherein said second insulation film is formed by:
- applying a film-forming liquid containing therein SiO2 particles having a diameter in the range between about 5 nm and about 50 nm and a binder, on said first CVD film;
- and heating said first CVD film applied with said film-forming liquid to form said second insulation film such that said second insulation film includes a void therein between said SiO2 particles;
- said step of forming said through-hole in said first insulation film being conducted continuously to said step of forming said groove in said second insulation film.
15 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a first interlayer insulation film on an underlying semiconductor structure;
- forming a first CVD film on said first interlayer insulation film by a CVD process;
- forming a second interlayer insulation film on said first CVD film;
- forming a second CVD film on said second interlayer insulation film;
- forming an opening consecutively through said second CVD film, said second interlayer insulation film, said first CVD film and said first interlayer insulation film;
- and
- forming a groove in said second CVD film and said second interlayer insulation film in correspondence to said opening, by applying a dry etching process to said second interlayer insulation film while using said first CVD film as an etching stopper, such that said groove penetrates through said second interlayer insulation film,
- wherein said first interlayer insulation film is formed by:
- applying a film-forming liquid containing therein SiO2 particles having a diameter in the range between about 5 nm and about 50 nm and a binder, on said semiconductor structure;
- and heating said semiconductor structure applied with said film-forming liquid to form said first interlayer insulation film such that said first interlayer insulation film includes a void therein between said SiO2 particles;
- and
- wherein said second interlayer insulation film is formed by:
- applying a film-forming liquid containing therein SiO2 particles having a diameter in the range between about 5 nm and about 50 nm and a binder, on said first CVD film;
- and heating said first CVD film applied with said film-forming liquid to form said second interlayer insulation film such that said second interlayer insulation film includes a void therein between said SiO2 particles.
11 more elements
Dependencies are inferred from the claim text.