Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device
AssigneeSharp Kabushiki Kaisha
InventorsTakeshi Kijima, Hironori Matsunaga
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Abstract
A bismuth silicate film (insulating film) 3 of Bi2SiO5 oriented predominantly in the direction of (100) is formed on a Si substrate 2 and a ferroelectric thin film 4 is formed on the bismuth silicate film 3 to create an MFIS structure having a c-axis-oriented ferroelectric thin film 4 formed with good reproducibility. A highly reliable thin film device is produced by applying the MFIS structure to a FET.
Claims10
An insulating material comprising a crystalline material containing Ti in Bi2SiO5 in an atomic concentration ratio Bi/Ti of 3 or more.
A substrate covered with an insulating film wherein an insulating material including a crystalline material containing Ti in Bi2SiO5 in an atomic concentration ratio Bi/Ti of 3 or more is formed on a Si substrate as an insulating film.
A thin film device comprising electrodes on an upper surface of a ferroelectric thin film formed on a substrate covered with an insulating film wherein the insulating film includes a crystalline material containing Ti in Bi2SiO5 in an atomic concentration ratio Bi/Ti of 3 or more, and on a lower surface of a Si substrate, and comprising a structure of the upper electrode/the ferroelectric thin film/the insulating film/the Si substrate/the lower electrode.
Dependencies are inferred from the claim text.