Low dielectric constant insulation layer for integrated circuit structure and method of making same
AssigneeLSI Logic Corporation
InventorAshok K. Kapoor
Life of this patent
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Abstract
A low dielectric constant insulation layer for an integrated circuit structure material, and a method of making same. The low dielectric constant insulation layer comprises a porous insulation layer, preferably sandwiched between non-porous upper and lower insulation layers. The porous insulation layer is formed by depositing a composite layer comprising an insulation material or a material which can be converted to an insulation material, by a converting process and a material which can be converted to a gas upon subjection to the converting process. Release of the gas leaves behind a porous matrix of the insulation material which has a lower dielectric constant than the composite layer.
Claims14
A process for forming a low dielectric constant insulation layer on an integrated circuit structure on a semiconductor wafer which comprises:
- a) forming a composite layer comprising one or more materials which are convertible to a gas and one or more materials which either are themselves insulation materials or are convertible to insulation materials;
- and
- b) converting said composite layer to a porous low dielectric constant insulation layer, wherein:
- said step of forming said composite layer on said semiconductor wafer further comprises depositing said composite layer on said wafer by a chemical vapor deposition process;
- said step of forming said composite layer further comprises depositing on said semiconductor wafer a mixture comprising:
- a) polycrystalline silicon, comprising the material which is convertible to an insulation material;
- and
- b) carbon, comprising the material which is convertible to a gas;
- and
- said step of converting said composite layer comprises simultaneously oxidizing said polycrystalline silicon to form silicon dioxide and oxidizing said carbon to produce gaseous carbon dioxide.
A process for forming a low dielectric constant insulation layer on an integrated circuit structure on a semiconductor wafer which comprises:
- a) forming a composite layer comprising one or more materials which are convertible to a gas and one or more materials which either are themselves insulation materials or are convertible to insulation materials;
- and
- b) converting said composite layer to a porous low dielectric constant insulation layer, wherein:
- said step of forming said composite layer on said semiconductor wafer further comprises depositing said composite layer on said wafer by a chemical vapor deposition process;
- said step of forming said composite layer further comprises depositing on said semiconductor wafer a mixture comprising:
- a) polycrystalline silicon, comprising the material which is convertible to an insulation material;
- and
- b) germanium, comprising the material which is convertible to a gas;
- and
- said step of converting said composite layer comprises simultaneously oxidizing said polycrystalline silicon to form silicon dioxide and oxidizing said carbon to produce gaseous germanium nitride.
Dependencies are inferred from the claim text.