Process for plugging defects in a dielectric layer of a semiconductor device

A process for plugging defects in a dielectric layer of a semiconductor device, comprising the steps of:

• providing a substrate material;
• forming an oxide layer overlying the substrate material;
• exposing the oxide layer to an ambient of nitrogen and silicon bearing gas species to initiate growth of a nitride film in any defects in the oxide layer;
• determining a transition point in a deposition rate curve of the nitride film which represents an end of a nuclei growth stage of the nitride film and a beginning of a continuous growth stage of the nitride film;
• and
• terminating exposure of the oxide layer to the ambient prior to the transition point in time.

A process of plugging defects in a dielectric layer of a semiconductor device, comprising the steps of:

• providing a silicon substrate;
• forming an oxide layer on the silicon substrate, the oxide layer having a thickness not greater than 300.ANG.;
• placing the substrate with the oxide layer in a reaction chamber;
• introducing an ammonia gas and a gas comprising silicon into the reaction chamber;
• reacting the ammonia gas and the gas comprising silicon to initiate growth of a nitride film on the oxide layer;
• and
• terminating the reaction of the ammonia gas and the gas comprising silicon prior to entering a stage of continuous growth of the nitride film.

A process of plugging defects in a dielectric layer of a semiconductor device, comprising the steps of:

• providing a semiconductor substrate material;
• forming a dielectric layer on the substrate material;
• after forming the dielectric layer, initiating growth of a predetermined material in any defects in the dielectric layer, the growth of the predetermined material having an initial growth rate;
• terminating growth of the predetermined material prior to an increase in the initial growth rate.