Y10S 148/097
Lattice strain and defects
Y10S148/097 (Lattice strain and defects) appears on 91 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 91
- Published applications
- 0
- Assignees
- 50
- Inventors
- 166
- Latest grant
- 22 Sep 1998
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 5 | 0 |
| 1989 | 13 | 0 |
| 1990 | 21 | 0 |
| 1991 | 6 | 0 |
| 1992 | 6 | 0 |
| 1993 | 1 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Low defect density/arbitrary lattice constant heteroepitaxial layers22 Sep 1998US 5,810,924 AInternational Business Machines Corporation
- Low defect density/arbitrary lattice constant heteroepitaxial layers19 Aug 1997US 5,659,187 AInternational Business Machines Corporation
- Surfactant-enhanced epitaxy13 May 1997US 5,628,834 AInternational Business Machines Corporation
- Epitaxial wafer of gallium arsenide phosphide10 Oct 1995US 5,456,765 AMitsubishi Kasei Corporation
- Method of controlling misfit dislocation7 Mar 1995US 5,395,770 AShin-Etsu Handotai Co., Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Method of making a superlattice heterojunction bipolar device179US 4,937,204 ASony Corporation · 1990
- Monolithic integration of silicon and gallium arsenide devices178US 4,774,205 AMassachusetts Institute of Technology · 1988
- Polysilicon thin film process151US 4,897,360 AWisconsin Alumni Research Foundation · 1990
- Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate135US 5,159,413 AEaton Corporation · 1992
- Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice132US 4,963,508 ADaido Tokushuko Kabushiki Kaisha · 1990