Epitaxial wafer of gallium arsenide phosphide
AssigneeMitsubishi Kasei Corporation
InventorsTadashige Sato, Hisanori Fujita
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Abstract
A mixed crystal ratio difference is introduced in a gallium arsenide phosphide mixed crystal layer having a desired constant mixed crystal ratio, thereby reducing the amount of stress remaining within the resulting epitaxial wafer. This is less likely or unlikely to crack, and so can be well used for LED fabrication.
Claims5
An epitaxial wafer of gallium arsenide phosphide that is obtained by forming on a gallium phosphide single crystal substrate a first gallium arsenide phosphide mixed crystal layer having a varying mixed crystal ratio and a second gallium arsenide phosphide mixed crystal layer having a constant mixed crystal ratio in this order, wherein:
- a mixed crystal ratio difference is introduced in the second gallium arsenide phosphide mixed crystal layer having a constant mixed crystal ratio, whereby the mixed crystal ratio of the face of said second mixed crystal layer opposite to the substrate becomes lower than that of the surface face thereof by 0.01 to 0.05.
Dependencies are inferred from the claim text.