Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
AssigneeEaton Corporation
InventorsJoseph A. Calviello, Grayce A. Hickman
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Abstract
A semiconductor device and processing technique is provided for monolithic integration of a single crystal compound element semiconductor on a ceramic substrate. A high resistivity semi-insulating buffer layer is epitaxially grown on the ceramic substrate and has an elastically transitional lattice constant matching at its lower surface the lattice constant of the ceramic substrate, and matching at its upper surface the lattice constant of the semiconductor layer.
Claims11
A semiconductor device having a single crystal compound element active semiconductor layer on a ceramic substrate for integration of active components, and a passive layer on the same said substrate for integration of passive components, comprising:
- a ceramic substrate;
- a first semi-insulating buffer layer epitaxially grown on said ceramic substrate, said first buffer layer having a lattice constant substantially matching the lattice constant of said active layer;
- a second semi-insulating buffer layer epitaxially grown on said first buffer layer, said second buffer layer having a lattice constant substantially matching the lattice constant of said passive layer,
- wherein said passive layer is epitaxially grown on said second buffer layer, and said active layer is epitaxially grown on said first buffer layer, to provide both active and passive layers monolithically integrated on said ceramic substrate.
A semiconductor device having a single crystal active semiconductor layer on a ceramic substrate for integration of active components therein, and a single crystal high temperature superconductor, HTS, passive layer on the same said ceramic substrate for integration of passive components therein, comprising:
- a ceramic substrate;
- a LaGaO.sub.3 layer epitaxially grown on said substrate;
- a LaAlO.sub.3 layer epitaxially grown on said LaGaO.sub.3 layer;
- a high temperature superconductor, HTS, layer epitaxially grown on said LaAlO.sub.3 layer;
- a compound element active semiconductor layer epitaxially grown on said LaGaO.sub.3 layer.
A semiconductor device having a single crystal compound element active semiconductor layer on a ceramic substrate for integration of active components, and a passive layer on the same said substrate for integration of passive components, comprising:
- a ceramic substrate;
- semi-insulating buffer layers epitaxially grown on said ceramic substrate and having lattice constants substantially matching the respective lattice constants of said active and passive layers;
- active and passive layers epitaxially grown on respective said buffer layers, whereby to provide both active and passive layers monolithically integrated on said ceramic substrate.
Dependencies are inferred from the claim text.