Back to results
US 5,628,834 AGranted
Surfactant-enhanced epitaxy
AssigneeInternational Business Machines Corporation
InventorsMatthew W. Copel, Rudolf M. Tromp
Life of this patent
Estimating the term…
Abstract
The present invention broadly concerns layered structures of substantially-crystalline materials and processes for making such structures. More particularly, the invention concerns epitaxial growth of a substantially-crystalline layer of a first material on a substantially-crystalline second material different from the first material utilizing an approximately one monolayer thick monovalent surfactant element.
Claims10
A layered structure including:
- (a) a substrate comprising substantially-single-crystalline silicon, the substrate having an oriented crystal face;
- (b) a layer comprising substantially-single-crystalline germanium extending on the oriented crystal face of the silicon substrate, the crystal lattice of the germanium being essentially epitaxial to the crystal lattice of the slilcon substrate, the germanium layer having a thickness of greater than six monolayers and having a minimum yield .alpha..sub.min for substantially-channeled incidence to essentially-random incidence Rutherford ion backscattering of about 5 percent or less measured with an approximately 100 keV beam of He.sup.+ ions;
- and
- (c) a layer of a multivalent surfactant element on a surface of the germanium layer opposing the silicon substrate, the layer of surfactant element being approximately a single monolayer thick.
1 more element
Dependencies are inferred from the claim text.