Y10S 148/083
Ion implantation, general
Y10S148/083 (Ion implantation, general) appears on 38 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 38
- Published applications
- 0
- Assignees
- 25
- Inventors
- 71
- Latest grant
- 13 Nov 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 8 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of manufacturing a 2-5 inch diameter glass substrate for a magnetic disk13 Nov 2001US 6,314,763 B1Saatec Engineering Corporation
- Method of manufacturing a 1-inch diameter glass substrate for a magnetic disk13 Nov 2001US 6,314,764 B1Saatec Engineering Corporation
- Surface reforming method of a metal product24 Oct 2000US 6,136,385 ASaatec Engineering Corporation
- Shield assembly for semiconductor wafer supports19 Dec 1995US 5,476,520 AAPPLIED Materials.Inc.
- Method of making a real time ion implantation metal silicide monitor19 Sep 1995US 5,451,529 ATaiwan Semiconductor Manufacturing Company.Ltd
No published applications in this class yet.
Most cited
By later US patents
- Ultra-thin semiconductor membranes63US 4,952,446 ACornell Research Foundation, Inc. · 1990
- Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method60US 5,244,820 A1993
- Method for making solid state device utilizing ion implantation techniques58US 5,082,793 A1992
- Method of thermal treatment of a wafer in an evacuated environment51US 4,743,570 AVarian Associates, Inc. · 1988
- Self-aligned manufacture of FET41US 4,546,540 AHitachi, Ltd. · 1985