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US 4,743,570 AGranted
Method of thermal treatment of a wafer in an evacuated environment
AssigneeVarian Associates, Inc.
InventorLawrence T. Lamont, Jr.
Life of this patent
Estimating the term…
Abstract
In a vacuum chamber wafer treating apparatus a wafer is heated or cooled by introducing a gas at a pressure of approximately 100 to 1000 microns in a region between the wafer and a heating element or heat sink. The gas conducts thermal energy between the wafer and heating element or heat sink.
Claims7
The method of treating a wafer-like article in a vacuum chamber comprising the steps of:
- positioning the article and a heat exchanging structure at a station within the vacuum chamber;
- engaging the article and said heat exchanging structure to be in pressing contact,
- and maintaining a gas under pressure which is substantially less than atmospheric pressure between the article and said structure to facilitate the conduction of heat between the article and said structure by said gas, said gas being inhibited from flowing from between said structure and article while said article and said structure are in contacting relationship and said heat conduction by said gas is being facilitated.
Dependencies are inferred from the claim text.