Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
OwnerTadashi Kamata, Mitsuharu Honda +3inventors
InventorsTadashi Kamata, Mitsuharu Honda, Jun Sugiura, Nobuo Owada, Hizuru Yamaguchi
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Abstract
The present invention relates to an ion implantation process in a wafer process for a semiconductor integrated circuit device. Particularly, according to the present invention, a shallow junction can be formed by performing the implantation of ion while holding a wafer to be processed at a low temperature.
Claims37
An ion implantation method for implanting a desired ion into a wafer to be processed, the wafer being in an ion implantation chamber, wherein the wafer is at a temperature of at most 0.degree. C. during the implanting of the desired ion, wherein the wafer is cooled during the implanting using a cooling device, and wherein near the wafer, in the ion implantation chamber, there is provided an auxiliary cooling device having an auxiliary cooling surface held at a temperature lower than the temperature of the wafer to prevent undesired contamination, extraneous ion, molecular condensation, adsorption and adhesion to the wafer, the auxiliary cooling device being separate from the cooling device.
An ion implantation method, wherein the implantation of ion is performed while a wafer to be processed resting on a wafer stage for ion implantation provided within an ion implantation chamber is cooled, during the ion implantation, to a temperature of at most 0.degree. C., wherein the wafer is cooled using a cooling device, and wherein in the ion implantation chamber there is provided an auxiliary cooling device having an auxiliary cooling surface near the wafer, said auxiliary cooling surface being held at a temperature lower than the temperature of the wafer to prevent undesired contamination, extraneous ion, molecular condensation, adsorption and adhesion to the wafer, the auxiliary cooling device being separate from the cooling device.
An ion implantation method involving implanting a desired ion into a plurality of wafers to be processed held on a wafer holding means while said wafer holding means is rotated at high speed, wherein the wafer is cooled during the ion implantation so that the wafer has a temperature of at most 0.degree. C. during the implanting of the desired ion, the wafer holding means being held in an ion implantation chamber during said implanting, wherein the wafer is cooled using a cooling device, and wherein in the ion implantation chamber there is provided an auxiliary cooling device having an auxiliary cooling surface near the plurality of wafers, said auxiliary cooling surface being held at a temperature lower than the temperature of the plurality of wafers to prevent undesired contamination, extraneous ion, molecular condensation, adsorption and adhesion to the plurality of wafers, the auxiliary cooling device being separate from the cooling device.
A method for producing a semiconductor integrated circuit device wherein a semiconductor integrated circuit is formed on a wafer to be processed by implanting an impurity ion into the wafer, said method being characterized in that:
- when an ion-implanted layer is not rendered amorphous to a satisfactory extent by implanting a desired impurity ion into the wafer at a predetermined concentration using an ion implanter whereby the wafer is held at room temperature in a stand-by state, the wafer is cooled to a temperature at which the ion-implanted layer is rendered amorphous to a satisfactory extent, and in this state the desired impurity ion is implanted into the wafer at said predetermined concentration, with the wafer cooled to a temperature of at most 0.degree. C. while implanting the desired impurity ion, the wafer being held in an ion implantation chamber during said implanting, wherein the wafer is cooled while implanting the desired impurity ion using a cooling device, and wherein in the ion implantation chamber there is provided an auxiliary cooling device having an auxiliary cooling surface near the wafer, said auxiliary cooling surface being held at a temperature lower than the temperature of the wafer to prevent undesired contamination, extraneous ion, molecular condensation, adsorption and adhesion to the wafer, the auxiliary cooling device being separate from the cooling device.
A method for producing a semiconductor integrated circuit device, comprising:
- a process of implanting an impurity ion which comprises a predetermined molecular ion into a first main surface, of a wafer, on which a semiconductor device is to be formed, the impurity ion being implanted while said first main surface is in a cooled state having a temperature of at most 0.degree. C., the wafer being held in an ion implantation chamber during said implanting, where the wafer is cooled, to provide said cooled state, using a cooling device, and wherein in the ion implantation chamber there is provided an auxiliary cooling device having an auxiliary cooling surface near the wafer, said auxiliary cooling surface being held at a temperature lower than the temperature of the wafer to prevent undesired contamination, extraneous ion, molecular condensation, adsorption and adhesion to the wafer, the auxiliary cooling device being separate from the cooling device.
An ion implantation method, wherein the implantation of ion into a wafer is performed while the wafer to be processed is at a temperature of at most room temperature during the ion implantation, the ion implantation being performed with the wafer in an ion implantation chamber, wherein the wafer is cooled, to provide the wafer at a temperature of at most room temperature, using a cooling device, and wherein in the ion implantation chamber there is provided an auxiliary cooling device having an auxiliary cooling surface near the wafer, said auxiliary cooling surface being held at a temperature lower than the temperature of the wafer to prevent undesired contamination, extraneous ion, molecular condensation, adsorption and adhesion to the wafer, the auxiliary cooling device being separate from the cooling device.
Dependencies are inferred from the claim text.