Y10S 148/061
Gettering-armorphous layers
Y10S148/061 (Gettering-armorphous layers) appears on 44 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 44
- Published applications
- 0
- Assignees
- 31
- Inventors
- 96
- Latest grant
- 1 Jun 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 8 | 0 |
| 1980 | 4 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 4 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Fabrication method for reduced-dimension FET devices1 Jun 1999US 5,908,307 AUltratech Stepper, Inc.
- Trench isolation for integrated circuits23 Feb 1999US 5,874,317 AAdvanced Micro Devices, Inc.
- Semiconductor silicon wafer and process for producing it14 Apr 1998US 5,738,942 AKabushiki Kaisha Toshiba
- Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device7 Oct 1997US 5,674,777 ANational Science Council
- Method for forming impurity junction regions of semiconductor device16 Sep 1997US 5,668,020 AHyundai Electronics Industries Co., Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process284US 4,226,898 AEnergy Conversion Devices, Inc. · 1980
- Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing169US 4,617,066 AHughes Aircraft Company · 1986
- Fabrication method for reduced-dimension FET devices93US 5,908,307 AUltratech Stepper, Inc. · 1999
- Method for photo annealing non-single crystalline semiconductor films79US 5,296,405 ASemiconductor Energy Laboratory Co.Ltd. · 1994
- Formation process of amorphous silicon film78US 4,585,671 AMitsui Toatsu Chemicals, Inc. · 1986