Method for photo annealing non-single crystalline semiconductor films
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Abstract
An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.
Claims11
A method of preparing non-single crystalline semiconductor films comprising the steps of:
- forming an intrinsic amorphous semiconductor film including silicon and oxygen at a minimum density less than 5.times.10.sup.18 cm.sup.-3 therein on a substrate by a CVD method;
- radiating said semiconductor film with light;
- introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
A method of preparing non-single crystalline semiconductor film comprising the step of:
- forming an amorphous semiconductor silicon semiconductor film on a substrate by a CVD method;
- radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure;
- and
- thermally annealing said semiconductor film at 100.degree.-500.degree. C.
A method of preparing non-single crystalline semiconductor film comprising the step of:
- forming an intrinsic amorphous semiconductor film on a substrate having an insulating surface by a CVD method at a temperature less than 500.degree. C.;
- radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure;
- and
- introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
The method of preparing non-single crystalline semiconductor film comprising the step of:
- forming an intrinsic amorphous semiconductor film including silicon and oxygen at a minimum density less than 5.times.10.sup.18 cm.sup.-3 therein on a substrate by a CVD method;
- radiating said semiconductor film with light to crystallize said semiconductor film to a polycrystalline or microcrystalline structure;
- and
- introducing a neutralizing agent selected from the group consisting of fluorine, chlorine, and hydrogen into the radiated semiconductor film.
Dependencies are inferred from the claim text.