Method for forming silicon-boron binary compound layer as boron diffusion source in silicon electronic device
AssigneeNational Science Council
InventorsTung-Po Chen, Tan-Fu Lei, Chun-Yen Chang
Life of this patent
Estimating the term…
Abstract
The present invention is related to a method for fabricating a silicon electronic device having a boron diffusion source layer, includes steps of: a) providing a silicon substrate; b) depositing a silicon layer on said silicon substrate; and c) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source. When the Si-B layer is formed by a UHV/CVD process according to the present invention, the boron concentration in the Si-B binary compound layer will be extraordinary high (up to 1.times.10.sup.21 to 5.times.10.sup.22 atoms/cm.sup.3).
Claims17
A method for fabricating a silicon electronic device having a boron diffusion source layer, comprising the steps of:
- a) providing a silicon substrate;
- b) depositing an amorphous silicon layer on said silicon substrate by using SiH.sub.4 gas in a low pressure CVD system at about 550.degree. C.;
- c) applying a temperature of about 800.degree. C. to said amorphous silicon layer under N.sub.2 atmosphere to recrystallize said amorphous silicon layer into a recrystallized amorphous silicon layer;
- and
- d) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source.
A method for fabricating a silicon electronic device having a boron diffusion source layer, comprising the steps of:
- a) providing a silicon substrate;
- b) depositing a silicon layer on said silicon substrate;
- and
- c) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source using a mixture of pure SiH.sub.4 and B.sub.2 H.sub.6 gases (1% in H.sub.2).
A method for fabricating a silicon electronic device having a boron diffusion source layer, comprising the steps of:
- a) providing a silicon substrate;
- b) depositing a silicon layer on said silicon substrate by using SiH.sub.4 gas in a low pressure CVD system at about 550.degree. C.;
- c) applying a temperature of about 800.degree. C. to said silicon layer under N.sub.2 atmosphere to recrystallize said silicon layer into a recrystallized silicon layer;
- and
- d) growing a silicon-boron binary compound layer on said silicon layer as said boron diffusion source.
Dependencies are inferred from the claim text.