Back to results
US 4,585,671 AGranted
Formation process of amorphous silicon film
AssigneeMitsui Toatsu Chemicals, Inc.
InventorsNobuhisa Kitagawa, Masataka Hirose, Kazuyoshi Isogaya, Yoshinori Ashida
Life of this patent
Estimating the term…
Abstract
A formation process of an amorphous silicon film, which process comprises subjecting a higher silane containing at least two silicon atoms to photochemical decomposition under radiation of a light having a wavelength of 300 nm or shorter so as to cause amorphous silicon to deposit on a substrate.
Claims7
A process for forming an amorphous silicon film, which process comprises subjecting a gaseous higher silane represented by the following general formula
- Si.sub.n H.sub.2n+2
- wherein n stands for an integer of 2 or greater to photo-chemical decomposition under radiation of light having a wavelength of 300 nm or shorter, at a temperature of 100.degree. to 300.degree. C. and at a pressure of atmospheric pressure or higher so as to cause amorphous silicon to deposit on a substrate.
Dependencies are inferred from the claim text.