Method for forming impurity junction regions of semiconductor device

A method for forming junction impurity regions of a semiconductor device, comprising the steps of:

• preparing a semiconductor substrate;
• forming an element-isolating insulating film defining a field region and an active region in said semiconductor substrate, forming a gate oxide film on a portion of said semiconductor substrate corresponding to said active region, forming a gate electrode on said gate insulating film, and forming insulating film spacers respectively on side walls of said gate electrode and gate insulating film;
• forming a first photoresist film pattern on the portion of said semiconductor substrate corresponding to said active region;
• implanting first impurity ions in portions of said semiconductor substrate exposed after the formation of said first photoresist film pattern under a condition that said first photoresist film pattern is used as a mask, thereby forming defecting regions;
• removing said first photoresist film pattern, and then forming a second photoresist film pattern on the exposed semiconductor surface portions except for the portion which was covered with said first photoresist film pattern;
• implanting second impurity ions in portions of said semiconductor substrate exposed after the formation of said second photoresist film pattern under a condition that said second photoresist film pattern is used as a mask, thereby forming amorphous regions;
• and
• removing said second photoresist film pattern, and then implanting third impurity ions in the portion of said semiconductor substrate corresponding to said active region under a condition that said element-isolating insulating film, gate electrode and insulating film spacers are used as a mask, thereby forming impurity junction regions.