Y10S 148/067
Graded energy gap
Y10S148/067 (Graded energy gap) appears on 46 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 46
- Published applications
- 0
- Assignees
- 32
- Inventors
- 86
- Latest grant
- 22 Sep 1998
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 21 | 0 |
| 1977 | 5 | 0 |
| 1978 | 2 | 0 |
| 1979 | 4 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Low defect density/arbitrary lattice constant heteroepitaxial layers22 Sep 1998US 5,810,924 AInternational Business Machines Corporation
- Low defect density/arbitrary lattice constant heteroepitaxial layers19 Aug 1997US 5,659,187 AInternational Business Machines Corporation
- Method for fabricating bipolar transistor16 Jan 1996US 5,484,737 AElectronics and Telecommunications Research Institute
- Method of making a gallium arsenide phosphide-, mixed crystal-epitaxial wafer6 Nov 1990US 4,968,642 AMitsubishi Chemical Industries Limited
- Material for light emitting element and method for crystal growth thereof31 Jul 1990US 4,944,811 AMitsubishi Cable Industries, Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Low defect density/arbitrary lattice constant heteroepitaxial layers101US 5,659,187 AInternational Business Machines Corporation · 1997
- Method for making semiconductors for solar cells90US 3,993,533 ACarnegie Mellon University · 1976
- Method of making semiconductor superlattices free of misfit dislocations90US 4,088,515 AInternational Business Machines Corporation · 1978
- Process for production of III-V compound crystals65US 4,010,045 A1977
- Low defect density/arbitrary lattice constant heteroepitaxial layers42US 5,810,924 AInternational Business Machines Corporation · 1998