Y10S 148/094
Laser beam treatment of compound devices
Y10S148/094 (Laser beam treatment of compound devices) appears on 38 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 38
- Published applications
- 0
- Assignees
- 29
- Inventors
- 77
- Latest grant
- 3 Apr 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 8 | 0 |
| 1988 | 4 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Product and process for forming a semiconductor structure on a host substrate3 Apr 2001US 6,210,479 B1International Business Machines Corporation
- Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms2 Jan 2001US 6,168,967 AThe Regents of the University of California
- Method of forming a layer and semiconductor substrate27 Apr 1999US 5,897,381 ALSI Logic Corporation
- Apparatus for rapid thermal processing of a wafer13 Apr 1999US 5,893,952 ALSI Logic Corporation
- Method of improving the spectral response and dark current characteristics of an image gathering detector24 Nov 1998US 5,840,592 AThe United States of America as represented by the Secretary of the Navy
No published applications in this class yet.
Most cited
By later US patents
- Method for producing via holes in polymer dielectrics127US 4,764,485 AGeneral Electric Company · 1988
- Method and making group IIB metal - telluride films and solar cells93US 4,950,615 AInternational Solar Electric Technology, Inc. · 1990
- Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy67US 4,859,625 AResearch Development Corporation of Japan, Junichi Nishizawa and Oki Electric Industry Co., Ltd. · 1989
- Product and process for forming a semiconductor structure on a host substrate57US 6,210,479 B1International Business Machines Corporation · 2001
- Passivation of gallium arsenide by nitrogen implantation39US 4,706,377 AUnited Technologies Corporation · 1987