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US 5,893,952 AGranted
Apparatus for rapid thermal processing of a wafer
AssigneeLSI Logic Corporation
InventorsSheldon Aronowitz, Nicholas Eib, Jon S. Owyang
Life of this patent
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Abstract
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
Claims20
Apparatus for rapid thermal processing of a wafer comprising:
- an IR window;
- an absorption film in thermal communication with the wafer;
- a source of narrowband electromagnetic energy;
- and
- a scanner operable to scan a beam of the energy from the source through the IR window and across a surface of the film, the energy from the beam being absorbed by the film, heat generated by the film being transferred to the wafer.
2 more elements
Dependencies are inferred from the claim text.