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US 4,706,377 AGranted
Passivation of gallium arsenide by nitrogen implantation
AssigneeUnited Technologies Corporation
InventorAlexander J. Shuskus
Life of this patent
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Abstract
A method of passivating a gallium arsenide surface includes the steps of implanting a subsurface layer of nitrogen ions and annealing and reactive the nitrogen to form a layer consisting primarily of gallium nitride.
Claims6
A method of electrically passivating a gallium arsenide surface of a gallium arsenide body comprising the steps of:
- implanting a predetermined dose of nitrogen ions into said gallium arsenide body through said surface to form a nitrogen-doped subsurface layer in said gallium arsenide body, and heating said body, whereby at least some of said nitrogen replaces at least some of the arsenic in said gallium arsenide body in said subsurface layer to form a passivating layer partially composed of gallium nitride.
A method of forming a gallium arsenide field effect transistor comprising the steps of:
- implanting a gallium arsenide substrate with a predetermined dose of nitrogen ions to form a nitrogen-doped subsurface layer;
- heating said gallium arsenide substrate to a predetermined temperature for a predetermined period of time, thereby removing arsenic from said nitrogen doped subsurface layer and forming a subsurface layer of gallium nitride of predetermined depth;
- forming source and drain electrodes in said substrate extending below said gallium nitride subsurface layer;
- and
- forming a gate electrode above said gallium nitride subsurface layer and positioned between said source and drain electrodes, whereby said subsurface layer of gallium nitride insulates said gate electrode from a channel region of said gallium arsenide substrate positioned below said gate electrode and between said source and drain electrodes.
2 more elements
Dependencies are inferred from the claim text.