Method of forming a layer and semiconductor substrate
AssigneeLSI Logic Corporation
InventorsSheldon Aronowitz, Nicholas Eib, Jon S. Owyang
Life of this patent
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Abstract
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
Claims25
A method of forming a layer on a semiconductor substrate having a frontside and a backside, comprising the steps of:
- placing a film of material in contact with the backside of the substrate;
- directing a beam of narrowband energy onto the film such that the film absorbs the energy and transfers heat to the substrate;
- controlling temperatures across the backside of the substrate;
- and
- performing an additive process on the frontside of the substrate.
A method of forming a layer on a semiconductor substrate having a frontside and a backside, comprising the steps of:
- forming an absorptive film on the backside of the substrate;
- directing a beam of narrowband energy from a laser onto the film such that the film absorbs substantially all the energy and transfers heat to the substrate;
- controlling temperatures across the backside of the substrate;
- and
- performing an additive process on the frontside of the substrate.
A method of forming a layer on a semiconductor substrate having a frontside and a backside, comprising the steps of:
- placing a film of material in contact with the backside of the substrate;
- directing a beam of narrowband energy from a laser towards the backside of the substrate and onto the film such that the film absorbs the energy and transfers heat to the substrate;
- and
- controlling the temperature and temperature distribution across the backside of the substrate;
- wherein controlling the temperature and temperature distribution includes scanning the beam across the film.
A method of forming a layer on a semiconductor substrate having a frontside and a backside, comprising the steps of:
- placing the substrate in a chamber;
- directing a beam of narrowband energy from a laser onto an IR window having an absorptive film formed thereon;
- wherein substantially all the energy from the beam is transmitted through the window;
- wherein substantially all the energy which is transmitted through the window is absorbed by the film such that the film is heated and the heat is transferred from the film to the substrate;
- and
- controlling temperatures across the backside of the substrate.
Dependencies are inferred from the claim text.