Y10S 148/059
Germanium on silicon or ge-si on iii-v
Official title: Germanium on silicon or Ge-Si on III-V
Y10S148/059 (Germanium on silicon or ge-si on iii-v) appears on 50 US grants and 2 published applications in this corpus.
Search patents in Y10S- Granted patents
- 50
- Published applications
- 2
- Assignees
- 39
- Inventors
- 91
- Latest grant
- 10 Mar 2009
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Low-temperature metal-induced crystallization of silicon-germanium films10 Mar 2009US 7,501,331 B2SanDisk 3D LLC
- Silicon-germanium-carbon compositions and processes thereof16 May 2000US 6,064,081 AArizona Board of Regents
- Localized lattice-mismatch-accomodation dislocation network epitaxy7 Dec 1999US 5,997,638 AInternational Business Machines Corporation
- Wet chemical etchants5 Oct 1999US 5,961,877 A
- Silicon-germanium-carbon compositions in selective etch processes25 May 1999US 5,906,708 ALawrence Semiconductor Research Laboratory, Inc.
Most cited
By later US patents
- Silicon-germanium-carbon compositions in selective etch processes119US 5,906,708 ALawrence Semiconductor Research Laboratory, Inc. · 1999
- Solution growth of lattice mismatched and solubility mismatched heterostructures118US 4,876,210 AUniversity of Delaware · 1989
- Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs114US 4,551,394 AHoneywell Inc. · 1985
- Method of forming a nonsilicon semiconductor on insulator structure113US 4,891,329 AMicroelectronics Center of North Carolina · 1990
- Selective deposition of doped silion-germanium alloy on semiconductor substrate113US 5,242,847 ANorth Carolina State University at Raleigh · 1993