Silicon-germanium-carbon compositions and processes thereof
AssigneesLawrence Semiconductor Research Laboratory, Inc., The Regents of the University of California, Arizona Board of Regents
InventorsMcDonald Robinson, Richard C. Westhoff, Charles E. Hunt, Li Ling, Ziv Atzmon
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Abstract
Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.
Claims6
A layered epitaxial structure, comprising:
- a single crystal silicon substrate;
- and
- one or more epitaxial layers on the single crystal silicon substrate of which one of the layers comprises Si--Ge--C, wherein the atomic percent ratio of germanium to carbon in the Si--Ge--C layer is outside the range of 6.7 to 1 and 12 to 1.
Dependencies are inferred from the claim text.